smd type mosfet 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 2SK3456 features low gate charge q g = 30 nc typ. (v dd = 400 v, v gs =10v,i d =12a) gate voltage rating 30 v low on-state resistance r ds(on) =0.60 max. (v gs =10v,i d =6.0a) avalanche capability ratings surface mount package available absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 500 v gate to source voltage v gss 30 v i d 12 a i dp * 36 a power dissipation t c =25 100 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =500v,v gs =0 10 a gate leakage current i gss v gs = 30v,v ds =0 100 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 2.5 3.5 v forward transfer admittance y fs v ds =10v,i d =6.0a 2.0 s draintosourceon-stateresistance r ds(on)1 v gs =10v,i d =6.0a 0.48 0.60 input capacitance c iss 1620 pf output capacitance c oss 250 pf reverse transfer capacitance c rss 10 pf turn-on delay time t on 24 ns rise time t r 18 ns turn-off delay time t off 50 ns fall time tf 15 ns total gate charge q g 30 nc gate to source charge q gs 9nc gate to drain charge q gd 11 nc v ds =10v,v gs =0,f=1mhz i d =6.0a,v gs(on) =10v,r g =10 ,v dd =150v i d =12a, v dd =400v, v gs =10v smd type smd type smd type smd type product specification smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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